Saripudin, Aip and Saragih, Horasdia and Khairurrijal (2014) Peer Review Effect of Growth Temperature on Cobalt-Doped TiO2 Thin Films Deposited on Si (100) Substrate by MOCVD Technique. Advanced Materials Research, 896. pp. 192-196. ISSN 1662-8985

[thumbnail of Peer Effect of Growth Temperature on Cobalt Doped] Text (Peer Effect of Growth Temperature on Cobalt Doped)
Peer Review Effect of Groeth Temperature on Cobalt Doped TiO220220328_16145041.pdf

Download (542kB)


Co:TiO2 (cobalt-doped titanium dioxide) thin films have been deposited on the n-type Si (100) substrate at the temperatures range of 325°C 450°C using MOCVD (metal organic chemical vapor deposition) technique. We investigated the effect of growth temperature on the structural and morphological quality of Co:TiO2 thin films. The structure of Co:TiO2 thin films were characterized by XRD while the morphology and the thickness of films were characterized by SEM. The XRD results reveal that all films show the anatase structure and the dominant orientation of anatase phase depends on the growth temperature. The grain size of crystal increases as the growth temperature increases. We also reveal that the growth rate of Co:TiO2 film has a maximum value at the growth temperature of 400°C.

Item Type: Article
Subjects: 500 – Ilmu Pengetahuan > 530 Fisika > 537 Listrik dan elektronik
Divisions: Fakultas Matematika & Ilmu Pengetahuan Alam > Farmasi
Depositing User: Mr BAA Admin
Date Deposited: 18 Oct 2021 09:48
Last Modified: 28 Mar 2022 09:18

Actions (login required)

View Item
View Item